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| Photodiode-Chip Preliminary Wavelength range Infrared, selective Type Integrated filter 6/28/2007 Technology AlGaAs/GaAs EPC-740-0.5 rev. 04/07 Electrodes P (anode) up 460 360 300 typ. dimensions (m) typ. thickness 300 (20) m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m Description Infrared-selective photodiode with narrow response range (680-770 nm) Applications Optical communications, safety equipment, light barriers PD-02 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Operating temperature range Storage temperature range Test onditions Symbol A Tamb Tstg Value 0.17 -40 to +125 -40 to +125 Unit mm C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions IR = 10 A Reverse voltage2 Dark current Responsivity at Peak sensitivity Spectral range at 10 % Spectral bandwidth at 50% Junction capacitance Switching time 1 2 Symbol VR ID S P 0.5 0.4 CJ tr, tf Min 5 Typ Max Unit V VR = 5 V P1 VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 5 V 40 0.5 740 680 80 40 15/30 200 pA A/W nm 770 nm nm pF ns Measured on bare chip on TO-18 header information only Labeling Type EP-740-0.5 Typ. ID [pA] Typ. S[A/W] Lot N Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip Preliminary 6/28/2007 EPC-740-0.5 rev. 04/07 Spectral response (typical) normalized to S at P 1,0 0,8 Responsivity (arb. units) 0,6 0,4 0,2 0,0 600 650 700 750 800 850 900 Wavelength (nm) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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